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V23990-P629-F56-PM final data sheet flow0 v23990-p629-f56-01-14 maximum ratings / h?chstzul?ssige werte p629-f56 1200v/25a parameter condition symbol datasheet values unit max. transistor h-bridge(igbt) transistor h-brcke(igbt) collector-emitter break down voltage v ce 1200 v kollektor-emitter-sperrspannung dc collector current tj=tjmax th=80c, i c 38 a kollektor-dauergleichstrom tc=80c repetitive peak collector current tp limited by tj max i cpuls 75 a periodischer kollektorspitzenstrom power dissipation per igbt tj=tjmax th=80c p tot 129 w verlustleistung pro igbt tc=80c gate-emitter peak voltage v ge 20 v gate-emitter-spitzenspannung sc withstand time* tj=tjmax vge=15v t sc 10 us kurzschlu?verhalten* vcc=360v max. chip temperature t jmax 150 c max. chiptemperatur diode h-bridge diode h-brcke dc forward current tj=tjmax th=80c, i f 25 a dauergleichstrom tc=80c repetitive peak forward current tp limited by i frm 50 a periodischer spitzenstrom power dissipation per diode tj=tjmax th=80c p tot 56 w verlustleistung pro diode tc=80c max. chip temperature t jmax 150 c max. chiptemperatur thermal properties thermische eigenschaften storage temperature t stg -40+125 lagertemperatur operation temperature t op -40+125 betriebstemperatur insulation properties modulisolation insulation voltage t=1min v is 4000 isolationsspannung creepage distance min 12,7 kriechstrecke clearance min 12,7 luftstrecke additional notes and remarks: * allowed number of short circuits must be less than 1000 times, and time duration between short circuits should be more than 1 second! revision: 1 copyright by vincotech
V23990-P629-F56-PM final data sheet flow v23990-p629-f56-01-14 characteristic values/ charateristische werte p629-f56 1 description symbol conditions datasheet values unit t(c) other conditions vge(v) vce(v) ic(a) if(a) (rgon-rgoff) vgs(v) vds(v) id(a) min typ ma x transistor h-bridge(igbt) transistor h-brcke(igbt) gate emitter threshold voltage v ge(th) tj=25c vce=vge 1m 3 5,5 7 v gate-schwellenspannung tj=125c collector-emitter saturation voltage v ce(sat) tj=25c 15 25 2,12 2,9 v kollektor-emitter s?ttigungsspannung tj=125c 2,24 collector-emitter cut-off i ces tj=25c 0 600 0,1 ma kollektor-emitter reststrom tj=125c gate-emitter leakage current i ges tj=25c 20 0 200 na gate-emitter reststrom tj=125c integrated gate resistor r gint none integrirter gate widerstand turn-on delay time t d(on) tj=25c rgoff=16 ns einschaltverz?gerungszeit tj=125c rgon=16 15 600 25 131 rise time t r tj=25c rgoff=16 ns anstiegszeit tj=125c rgon=16 15 600 25 15 turn-off delay time t d(off) tj=25c rgoff=16 ns abschaltverz?gerungszeit tj=125c rgon=16 15 600 25 233 fall time t f tj=25c rgoff=16 ns fallzeit tj=125c rgon=16 15 600 25 92 turn-on energy loss per pulse e on tj=25c rgoff=16 mws einschaltverlustenergie pro puls tj=125c rgon=16 15 600 25 1,35 turn-off energy loss per pulse e off tj=25c rgoff=16 mws abschaltverlustenergie pro puls tj=125c rgon=16 15 600 25 1,76 input capacitance c ies tj=25c f=1mhz 0 25 2,02 nf eingangskapazit?t tj=125c output capacitance c oss tj=25c f=1mhz 0 25 0,19 nf ausgangskapazit?t tj=125c reverse transfer capacitance cies tj=25c f=1mhz 0 25 0,06 nf rckwirkungskapazit?t tj=125c thermal resistance chip to heatsink per chip r thjh thermal foil thickness=76um 0,54 k/w w?rmewiderstand chip-khlk?rper pro chip kunze foil ku alf5 diode h-bridge diode h-brcke diode forward voltage v f tj=25c 25 1 2,65 4 v durchla?spannung tj=125c 2,31 peak reverse recovery current i rm tj=25c rckstromspitze tj=125c rgon=16 15 600 25 54,5 reverse recovery time t rr tj=25c ns sperreverz?gerungszeit tj=125c rgon=16 15 600 25 147 reverse recovered charge q rr tj=25c uc sperrverz?gerungsladung tj=125c rgon=16 15 600 25 3,42 reverse recovered energy erec tj=25c mws sperrverz?gerungsenergie tj=125c rgon=16 15 600 25 1,55 thermal resistance chip to heatsink per chip w?rmewiderstand chip-khlk?rper pro chip r thjh thermal foil thickness =76um 1,25 k/w kunze foil ku alf5 ntc-thermistor ntc-widerstand rated resistance r 25 tj=25c 20,9 22 23,1 kohm nennwiderstand tj=125c deviation of r100 d r/r tj=25c 2,9 %/k abweichung von r100 tj=125c power dissipation given epcos-typ p tj=25c 210 mw verlustleistung epcos-typ angeben tj=125c b-value b (25/100) tj=25c 3980 k b-wert tj=125c revision: 1
fastpack0 v23990-p629f56 output inverter fi gure 1 . typical output characteristics fi gure 2 . typical output characteristics output inverter igb t output inverter igb t ic= f(v ce ) ic= f(v ce ) parameter: tp = 250 us tj = 25 c parameter: tp = 250 us tj = 125 c v ge parameter: from: 7 v to 17 v v ge parameter: from: 7 v to 17 v in 1 v steps in 1 v steps fi gure 3 . typical transfer characteristics fi gure 4 . typical diode forward current as output inverter igb t a function of forward voltage ic= f(v ge ) output inverter fred i f =f(v f ) parameter: tp = 250 us v ce = 10 v parameter: tp = 250 us 0 10 20 30 40 50 60 012345 v ce (v) ic (a) 0 5 10 15 20 25 03691 2 v ge (v) i c (a) 125 oc 25 oc 0 10 20 30 40 50 60 01234 v f (v) i f (a) 25 oc 125 oc 0 10 20 30 40 50 60 012345 v ce (v) ic (a) revision: 1
fastpack0 v23990-p629f56 output inverter figure 5. typical switching energy losses figure 6. typical switching energy losses as a function of collector current as a function of gate resistor output inverter igbt output inverter igbt e = f (ic) e = f (r g ) inductive load, tj = 125 c inductive load, tj = 125 c v ce = 600 v v ce = 600 v v ge = 15 v v ge = 15 v rgon= 16 ic = 25 a rgoff= 16 figure 7. typical switching times as a figure 8. typical switching times as a function of collector current function of gate resistor output inverter igbt output inverter igbt t = f (ic) t = f (r g ) inductive load, tj = 125 c inductive load, tj = 125 c v ce = 600 v v ce = 600 v v ge = 15 v v ge = 15 v rgon= 16 ic = 25 a rgoff= 16 t doff t f t don t r 0,001 0,01 0,1 1 0 1 02 03 04 05 0 ic (a) t ( s) e off e on erec 0 0,5 1 1,5 2 2,5 3 3,5 0 1 02 03 04 05 0 i c (a) e (mws) e off e on erec 0 0,5 1 1,5 2 2,5 3 3,5 0 1 53 04 56 07 5 r g ( ) e (mws) t doff t f t don t r 0,001 0,01 0,1 1 0 1 53 04 56 07 5 r g ( ) t ( s) reision 1
fastpack0 v23990-p629f56 output inverter figure 9. typical reverse recovery time as a figure 10. typical reverse recovery current as a function of igbt turn on gate resistor function of igbt turn on gate resistor output inverter fred diode output inverter fred diode t rr = f (rgon) i rrm = f (rgon) tj = 125 c tj = 125 c v r = 600 v v r = 600 v i f = 25 a i f = 25 a v ge = 15 v v ge = 15 v figure 11. typical reverse recovery charge as a figure 12. typical rate of fall of forward function of igbt turn on gate resistor and reverse recovery current as a output inverter fred diode function of igbt turn on gate resistor q rr = f (rgon) output inverter fred diode di0/dt,direc/dt = f (rgon) tj = 125 c tj = 125 c v r = 600 v v r = 600 v i f = 25 a i f = 25 a v ge = 15 v v ge = 15 v 0 0,1 0,2 0,3 0,4 0,5 0 1530456075 r gon ( ) t rr ( s) 0 20 40 60 80 100 0 1530456075 r gon ( ) irr m (a) 0 1 2 3 4 5 0 1 53 04 56 07 5 r gon ( ) q rr ( c) di0/dt direc/dt 0 1000 2000 3000 4000 5000 6000 0 1 53 04 56 07 5 r gon ( ) di rec / dt (a/ s) revision: 1
fastpack0 v23990-p629f56 output inverter figure 13. igbt transient thermal impedance figure 14. fred transient thermal impedance as a function of pulse width as a function of pulse width z th jh = f(tp) z th jh = f(tp) parameter: d = tp / t rthjh = 0,54 k/w parameter: d = tp / t rthjh = 1,25 k/w igbt thermal model values fred thermal model values r (c/w) tau (s) r (c/w) tau (s) 0,02 7,6e+00 0,04 3,4e+00 0,07 1,3e+00 0,10 5,6e-01 0,15 1,7e-01 0,37 8,0e-02 0,22 4,8e-02 0,32 2,0e-02 0,05 3,6e-03 0,27 3,3e-03 0,04 4,5e-04 0,15 6,9e-04 #ref! #ref! t p (s) z thjh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 t p (s) z thjh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 revision: 1 copyright by vincotech
fastpack0 v23990-p629f56 output inverter fi gure 15 . power dissipation as a fi gure 16 . collector current as a function of heatsink temperature function of heatsink temperature output inverter igbt output inverter igbt p tot = f (th) i c = f (th) parameter: tj= 150 oc parameter: tj= 150 oc v ge = 15 v fi gure 17 . power dissipation as a fi gure 18 . forward current as a function of heatsink temperature function of heatsink temperature output inverter fred output inverter fred p tot = f (th) i f = f (th) parameter: tj= 150 oc parameter: tj= 150 oc 0 50 100 150 200 250 300 0 50 100 150 200 th ( o c) p tot (w) 0 10 20 30 40 0 50 100 150 200 th ( o c) i c (a) 0 30 60 90 120 150 0 50 100 150 200 th ( o c) p tot (w) 0 10 20 30 40 0 50 100 150 200 th ( o c) i f (a) reision 1 copyright by vincotech
fastpack0 v23990-p629f56 thermistor figure 19. typical ntc characteristic as afunction of temperature r t = f (t) ntc-typical temperature characteristic 0 5000 10000 15000 20000 25000 25 50 75 100 125 t (c) r/ reision 1 copyright by vincotech
fastpack0 v23990-p629f56 switching definitions general conditions: tj= 125 c rgon= 16 rgoff= 16 figure 1. turn-off switching waveforms & figure 2. turn-on switching waveforms & d e fi n iti on o ftd o ff , t eoff d e fi n iti on o ft don , t eon (t eoff = i n t egra ti ng ti me f or e off ) (t eon = i n t egra ti ng ti me f or e on ) output inverter igbt output inverter igbt uge(0%)= -15 v uge(0%)= -15 v uge(100%)= 15 v uge(100%)= 15 v uc(100%)= 600 v uc(100%)= 600 v ic(100%)= 25 a ic(100%)= 25 a tdoff= 0,23 us tdon= 0,13 us t eoff = 0,40 us t eon = 0,39 us figure 3. turn-off switching waveforms & figure 4. turn-on switching waveforms & d e fi n iti on o ft f d e fi n iti on o ft r output inverter igbt output inverter igbt uc(100%)= 600 v uc(100%)= 600 v ic(100%)= 25 a ic(100%)= 25 a t f = 0,092 us t r = 0,015 us ic 1% uce 90% uge 90% -40 -20 0 20 40 60 80 100 120 140 -0,3 -0,2 -0,1 0 0,1 0,2 0,3 0,4 0,5 0,6 time (us) % tdoff teoff uce ic uge fitted ic10% ic 90% ic 60% ic 40% -20 0 20 40 60 80 100 120 140 0,1 0,15 0,2 0,25 0,3 0,35 0,4 0,45 time (us) % uce ic tf ic10% uge10% tdon uce3% -50 0 50 100 150 200 250 300 350 400 2,6 2,7 2,8 2,9 3 3,1 3,2 3,3 3,4 3,5 time(us) % ic uce t eon uge ic10% ic90% -20 20 60 100 140 180 220 260 300 340 380 2,85 2,9 2,95 3 3,05 3,1 3,15 3,2 time(us) % tr uce ic revision: 1 copyright by vincotech
fastpack0 v23990-p629f56 switching definitions figure 5. turn-off switching waveforms & figure 6. turn-on switching waveforms & definition of t eoff definition of t eon output inverter igbt output inverter igbt poff(100%)= 14,96 kw pon(100%)= 15 kw eoff(100%)= 1,76 mj eon(100%)= 1,35 mj t eoff = 0,40 us t eon = 0,39 us figure 7. gate voltage vs gate charge figure 8. turn-off switching waveforms & output inverter igbt definition of t rr output inverter fred ugeoff= -15 v ugeon= 15 v ud(100%)= 600 v uc(100%)= 600 v id(100%)= 25 a ic(100%)= 25 a i rrm (100%)= 55 a qg= 309,3 nc trr= 0,15 us ic 1% uge90% -20 0 20 40 60 80 100 120 -0,4 -0,2 0 0,2 0,4 0,6 0,8 time (us) % pof f eoff teoff uce3% uge10% -20 20 60 100 140 180 220 260 300 2,7 2,8 2,9 3 3,1 3,2 3,3 3,4 time(us) % pon eon teon i rrm 10% i rrm 90% i rrm 100% trr -300 -250 -200 -150 -100 -50 0 50 100 150 2,8 2,9 3 3,1 3,2 3,3 3,4 time(us) % id ud fitted -20 -15 -10 -5 0 5 10 15 20 -50 0 50 100 150 200 250 300 350 qg (nc) uge (v) revision: 1
fastpack0 v23990-p629f56 switching definitions figure 9. turn-on switching waveforms & figure 10. turn-on switching waveforms & definition of t qrr definition of t erec (tqrr= integrating time for qrr) (t erec = integrating time for e rec ) output inverter fred output inverter fred id(100%)= 25 a prec(100%)= 15 kw qrr(100%)= 3,419 uc erec(100%)= 1,55 mj tqint= 0,50 us terec= 0,50 us -50 -25 0 25 50 75 100 125 150 2,6 2,8 3 3,2 3,4 3,6 3,8 4 time(us) % p rec erec te rec tqint -250 -200 -150 -100 -50 0 50 100 150 2,6 2,8 3 3,2 3,4 3,6 3,8 4 time(us) % id q rr revision: 1 copyright by vincotech

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